page . 1 jan 27,2010-rev.00 PJP13N50 / pjf13n50 fea tures ? 13a , 500v, r ds(on) =0.52 @v gs =10v, i d =6.5a ? low on resistance ? fa st switching ? low gate charge ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charge a nd smps ? in compli a nce with eu rohs 2002/95/ec dire ctives mechanical da ta ? ca se: t o-220ab / it o-220ab molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 500v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note: 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice gate drain source to-220ab / ito-220ab to-220ab ito-220ab internal schematic diagram 1 2 3 g d s 1 2 3 g d s type marking package packing PJP13N50 p13n50 to-220ab 50pcs/tube pjf13 n50 f13n50 ito-220ab 50pcs/tube pa ra m e te r s ym b o l p j p 1 3 n5 0 p j f 1 3 n5 0 uni ts d r a i n- s o ur c e vo lta g e v d s 5 0 0 v ga te - s o ur c e vo lta g e v gs + 3 0 v c o nti nuo us d ra i n c ur re nt i d 1 3 1 3 a p ul s e d d r a i n c urr e nt 1 ) i d m 5 2 5 2 a m a x i m um p o we r d i s s i p a ti o n d e ra ti ng f a c to r t a =2 5 o c p d 1 7 5 1 .4 5 2 0 . 4 2 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c avala nche energy with single pulse i as =12.5a, vdd=50v, l=10mh e a s 7 8 0 m j junc tion-to-case thermal resistance r j c 0 .7 2 . 4 o c /w j unct ion-to ambient thermal resistance r j a 6 2 .5 1 0 0 o c /w
page . 2 jan 27,2010-rev.00 PJP13N50 / pjf13n50 electrical characteristics ( t a =25 o c unless otherwise noted ) note : plus te st : pluse w idth < 300us, duty cycle < 2%. p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 5 0 0 - - v ga te thre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 2 .0 - 4 .0 v d r a i n - s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 6.5 a - 0.36 0.52 ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds =500v, v gs =0v - - 1 ua gate body leakage i gs s v gs = + 3 0 v, v d s =0 v - - + 1 0 0 n dynamic to ta l ga te c ha r g e q g v d s =4 0 0 v, i d = 1 2 a v gs =1 0 v - 5 8 .6 - nc ga te - s o ur c e c ha rg e q g s - 11 .8 - ga te - d r a i n c ha r g e q g d - 18.6 - tur n- on d e la y ti me t d (o n) v dd =250v , i d = 6 a v gs =10v , r g = 25 - 19.6 32 ns tur n - on ri s e ti m e t r - 42 85 tur n- off d e la y ti me t d (o ff) - 8 0 .4 1 5 0 tur n- off f a ll ti m e t f - 5 2 9 0 inp ut c a p a c i ta nc e c i s s v d s =2 5 v, v gs =0 v f=1 .0 mh z - 2 0 0 0 2 4 5 0 p f outp ut c a p a c i t a nc e c o s s - 205 250 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 16 22 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 1 3 a ma x.p uls e d s o ur c e c urr e nt i s m - - - 5 2 a d i o d e f o r wa r d vo lta g e v s d i s = 1 3 a , v gs =0 v - - 1 .4 v re ve r s e re c o ve r y ti m e t r r v gs =0 v, i f = 1 2 a d i /d t =1 0 0 a /us - 4 5 0 - ns re ve r s e re c o ve r y c ha r g e q rr - 5 .0 - uc
PJP13N50 / pjf13n50 typical characteristics curves ( ta=25 , un l ess otherwise noted) fig.1 output characteristric fig.2 transfer characteristric 0 2 4 6 8 10 12 14 16 1 8 2 0 22 24 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v gs = 20v~ 5.0v 6.0v 0.2 0.3 0.4 0 . 5 0.6 0 4 8 12 16 20 r ds(on) - on resistance( ) i d - drain current (a) v gs = 20v v gs =10v 0.2 0.3 0.4 0 . 5 0.6 0.7 0.8 2 4 6 8 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d =6.5a t j =25 o c 0.1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =25v t j = 125 o c 25 o c - 55 o c PJP13N50 / pjf13n50 typical characteristics curves ( ta=25 , un l ess otherwise noted) fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage jan 27,2010-rev.00 fig.5 on resistance vs junction temperature fig.6 capacitance page. 3 0.5 0.7 0.9 1 . 1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) fig.1 output characteristric fig.2 transfer characteristric 0 2 4 6 8 10 12 14 16 1 8 2 0 22 24 0 5 10 15 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v gs = 20v~ 5.0v 6.0v 0.2 0.3 0.4 0 . 5 0.6 0 4 8 12 16 20 r ds(on) - on resistance( ) i d - drain current (a) v gs = 20v v gs =10v 0 500 100 0 1 500 2000 2500 3000 3500 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss coss crss f = 1mhz v gs = 0v 0.2 0.3 0.4 0 . 5 0.6 0.7 0.8 2 4 6 8 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d =6.5a t j =25 o c 0.5 0.7 0.9 1 . 1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) v gs =10 v i d =6. 5 a 0.1 1 10 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =25v t j = 125 o c 25 o c - 55 o c
fig. 7 gate charge waveform PJP13N50 / pjf13n50 typical characteristics curves ( ta=25 , unl e ss otherwise noted) fig.8 source-drain diode forward voltage 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv bv bv bv dss dss dss dss - - - - breakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) tj - junction temperature ( o c) i d = 250 a 0.01 0.1 1 10 100 0 . 2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v -55 o c 0 2 4 6 8 10 12 0 10 2 0 30 40 50 60 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =12a v ds =400v v ds =250v v ds =100v fig. 7 gate charge waveform PJP13N50 / pjf13n50 typical characteristics curves ( ta=25 , unl e ss otherwise noted) fig.8 source-drain diode forward voltage fig.9 breakdown voltage vs junction temperature jan 27,2010-rev.00 page. 4 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 bv bv bv bv dss dss dss dss - - - - breakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) breakdown voltage(normalized) tj - junction temperature ( o c) i d = 250 a 0.01 0.1 1 10 100 0 . 2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v -55 o c 0 2 4 6 8 10 12 0 10 2 0 30 40 50 60 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =12a v ds =400v v ds =250v v ds =100v
page . 5 jan 27,2010-rev.00 PJP13N50 / pjf13n50 copyright panjit international, inc 2010 the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement
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